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  sfh 415 gaas-ir-lumineszenzdioden  gaas infrared emitters  lead (pb) free product - rohs compliant 2009-08-21 1 wesentliche merkmale ? gaas-led mit sehr hohem wirkungsgrad  hohe zuverl?ssigkeit  ul version erh?ltlich  gute spektrale anpassung an si-fotoempf?nger  sfh 415: geh?usegleich mit sfh 300, sfh 203  anwendungen  ir-fernsteuerung von fernseh- und rundfunkger?ten, videorecordern, lichtdimmern  ger?tefernsteuerungen fr gleich- und wechsellichtbetrieb  rauchmelder  sensorik  diskrete lichtschranken typ  type bestellnummer  ordering code strahlst?rkegruppierung 1) ( i f = 100 ma, t p = 20 ms) radiant intensity grouping 1)  i e (mw/sr) sfh 415 q62702-p0296 > 25 sfh 415-u q62702-p1137 > 40 1) gemessen bei einem raumwinkel  = 0.01 sr / measured at a solid angle of  = 0.01 sr features  very highly efficient gaas-led  high reliability  ul version available  spectral match with silicon photodetectors   sfh 415: same package as sfh 300, sfh 203  applications  ir remote control of hi-fi and tv-sets, video tape recorders, dimmers  remote control for steady and varying intensity  smoke detectors  sensor technology  discrete interrupters
2009-08-21 2 sfh 415 grenzwerte ( t a = 25  c)  maximum ratings bezeichnung  parameter symbol  symbol wert  value einheit  unit betriebs- und lagertemperatur  operating and storage temperature range t op ; t stg ? 40  + 100  c sperrspannung  reverse voltage v r 5v durchlassstrom  forward current i f 100 ma sto?strom, t p  10  s, d = 0  surge current i fsm 3a verlustleistung  power dissipation p tot 165 mw w?rmewiderstand  thermal resistance r thja 450 k/w kennwerte ( t a = 25  c)  characteristics bezeichnung  parameter symbol  symbol wert  value einheit  unit wellenl?nge der strahlung  wavelength at peak emission  i f = 100 ma, t p = 20 ms  peak 950 nm spektrale bandbreite bei 50% von i max  spectral bandwidth at 50% of i max i f = 100 ma  55 nm abstrahlwinkel  half angle  sfh 415    
 17   grad aktive chipfl?che  active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che  dimensions of the active chip area l b  l w 0.3 0.3 mm 2 abstand chipoberfl?che bis linsenscheitel  distance chip front to lens top  h  4.2  4.8  mm
sfh 415 2009-08-21 3 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 100 ma, r l = 50  switching times, e from 10% to 90% and from 90% to 10%, i f = 100 ma, r l = 50  t r , t f 0.5  s kapazit?t  capacitance  v r = 0 v, f = 1 mhz c o 25 pf durchlassspannung  forward voltage  i f = 100 ma, t p = 20 ms  i f = 1 a, t p = 100  s   v f  v f   1.3 ( 1.5)  2.3 ( 2.8)   v  v sperrstrom  reverse current  v r = 5 v i r 0.01 ( 1)  a gesamtstrahlungsfluss  total radiant flux  i f = 100 ma, t p = 20 ms  e 22 mw temperaturkoeffizient von i e bzw.  e ,  i f = 100 ma  temperature coefficient of i e or  e ,  i f = 100 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 100 ma  temperature coefficient of v f , i f = 100 ma tc v ? 2 mv/k temperaturkoeffizient von  , i f = 100 ma  temperature coefficient of  , i f = 100 ma tc  + 0.3 nm/k kennwerte ( t a = 25  c)  characteristics (cont?d) bezeichnung  parameter symbol  symbol wert  value einheit  unit
2009-08-21 4 sfh 415 gruppierung der strahlst?rke i e in achsrichtung  gemessen bei einem raumwinkel  = 0.01 sr  grouping of radiant intensity i e in axial direction  at a solid angle of  = 0.01 sr bezeichnung  parameter symbol wert value einheit  unit sfh 415 sfh 415-t 1) sfh 415-u strahlst?rke  radiant intensity  i f = 100 ma,  t p = 20 ms   i e min i e max   25  ?   25  50   40  ?   mw/sr  mw/sr strahlst?rke  radiant intensity  i f = 1 a,  t p = 100  s   i e typ .   ?   350   450   mw/sr 1) sfh 415-t kann nicht einzeln bestellt werden. / sfh 415-t can not be ordered separately.
sfh 415 2009-08-21 5 relative spectral emission  i rel = f (  )  forward current  i f = f ( v f ), single pulse, t p = 20  s permissible pulse handling capability i f = f (  ), t a = 25  c  duty cycle d = parameter ohrd1938 rel 0 880 920 960 1000 nm 1060 20 40 60 80 % 100 10 ohr01554 f v -3 -2 10 -1 10 0 10 1 10 0123456v8 a f t ohr00860 p -5 10 10 2 f 10 3 10 4 5 dc 0.2 0.5 0.1 0.005 0.01 0.02 0.05 t p t f t p t d = 5 ma -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 s d = radiant intensity   single pulse, t p = 20  s radiation characteristics,  rel = f ( )   e e 100 ma = f ( i f ) ohr01551 10 -3 f -2 10 10 -1 10 0 10 1 10 2 e 100 ma e -2 10 -1 10 0 10 1 10 a a ohr01552 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 max. permissible forward current  i f = f ( t a )  ohr00883 0 f 0 20 40 60 80 100 120 20 40 60 80 100 120 ma ?c t a r thja = 450 k/w
2009-08-21 6 sfh 415 ma?zeichnung  package outlines ma?e in mm (inch) / di mensions in mm (inch). empfohlenes l?tpaddesign wellenl?ten (ttw) recommended solder pad ttw soldering  ma?e in mm (inch) / di mensions in mm (inch). 7.8 (0.307) 7.5 (0.295) 9.0 (0.354) 8.2 (0.323) 29 (1.142) 27 (1.063) 1.8 (0.071) 1.2 (0.047) 4.8 (0.189) 4.2 (0.165) ?5.1 (0.201) ?4.8 (0.189) 0.8 (0.031) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) spacing 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) area not flat chip position cathode geoy6645 4 (0.157) ohlpy985 4.8 (0.189)
sfh 415 2009-08-21 7 l?tbedingungen  soldering conditions  wellenl?ten (ttw) (nach cecc 00802)  ttw soldering (acc. to cecc 00802)   published by  osram opto semiconductors gmbh leibnizstrasse 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics.  terms of delivery and rights to change design re served. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sor ted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves


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